Do you know how to use the overfront effect tube switching circuit? This circuit is generally divided into two kinds. One is the n-channel, the other is a P-channel. If you want to apply to high-end drivers in your circuit design, you can use PMOS to guide Tong, if you are interested, you will learn about the lower P-channel and N-channel MOS pipe switch circuit map!
Do you know how to use the overfront effect tube switching circuit? This circuit is generally divided into two kinds. One is the n-channel, the other is a P-channel. If your circuit design is applied to high-end drivers, you can use PMOS is turned on. If you are interested, you will learn about the lower P-channel and N-channel MOS tube switch circuit maps!
MOS control circuit diagram
MOS tube switching circuit is A circuit constructed by the MOS pipe gate (G) to control the principle of the MOS duct source (S) and the drain (D). The MOS tube is divided into N channels and P channels, so the switching circuit is mainly divided into two.
1, P-channel MOS Tube Switch Circuit
The characteristics of the PMOS, the VGS is less than a certain value, which is suitable for source connection The situation (high-end driver) when VCC. It should be noted that the VGS refers to the voltage of the gate G and the source S, that is, the gate is lower than the power source, which is turned on, rather than the ground voltage. However, because the PMOS turbine internal resistance is relatively large, only low power is applied. High power still uses N-channel MOS tube. 2, N-channel MOS Tube
NMOS characteristics, VGS is greater than a certain value Tong, suitable for the source (low-end driving) when the source is grounded, as long as the gate voltage is greater than the VGS given in the parameter manual, the drain D is powered, and the source S is grounded. It should be noted that VGS refers to the pressure difference between the gate G and the source S, so when the NMOS is driven as a high-end driving, the drain D is equal to the source S with the source S, then The gate G must be higher than the source S and the drain D voltage, the drain D and the source S can continue to turn on.
The above is a related introduction of the field effect tube switching circuit. The high-end driving is generally applied to the characteristics of PMOS, while low-end driving is generally applied to NMOS characteristics, and the gate G and source S are measured. Differential pressure.
Original article，author：zongmuLi，If reprinted，Please indicate the source：http://madedesign.net/index.php/2021/04/03/p-channel-and-n-channel-mos-tube-switch-circuit-diagram/